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Topic
Plasma simulation for process and space engineering: plasma etching, PECVD, magnetron sputtering, plasma cleaning, nanoparticle synthesis, Hall thrusters and spacecraft charging, with PIC, fluid and coupled electromagnetic models.
7 articles
How plasma nanoparticle synthesis simulation links the temperature history of the vapour to the size distribution: nucleation, condensation and coagulation in thermal plasma, particle charging and afterglow aggregation in low-pressure plasma, population balance choices, scale-up and surrogates.
How atmospheric plasma treatment simulation sets a process window for cleaning and activation: streamer and filament models, turbulent mixing with ambient air, species flux through the boundary layer, dwell time and dose, part heating, ageing, and surrogates over gap, flow, power and speed.
How spacecraft charging simulation works: current balance with photoemission and secondary emission, differential charging against ESD thresholds, internal charging, discharge coupling into harnesses, material and grounding trades, uncertainty in emission data, and where surrogates help.
How Hall thruster simulation handles anomalous electron transport, wall erosion, discharge oscillations, vacuum-facility effects and the plume: fluid, hybrid and PIC model choices, magnetic nozzles, a validation record and surrogates with a stated range.
How magnetron sputtering simulation connects the magnet field, the PIC-MCC discharge with its power supply, target erosion, sputtered-atom transport through hot thin gas, reactive hysteresis, HiPIMS and film uniformity on moving substrates, with calibration, validation and surrogates of stated range.
How PECVD simulation explains film uniformity, stress and chamber clean: showerhead flow and pumping, the capacitively coupled discharge, fluid, PIC-MCC and electromagnetic models, reaction-set uncertainty, particles, and where surrogates help and where they do not.
How plasma etching simulation links reactor ion and radical fluxes to trench profiles: ICP and CCP models, sheath distributions, charging, aspect-ratio-dependent etching, reaction-set uncertainty, chamber matching and surrogates.
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